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| New Product SI5499DC Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () 0.036 at VGS = - 4.5 V -8 0.045 at VGS = - 2.5 V 0.056 at VGS = - 1.8 V 0.077 at VGS = - 1.5 V ID (A)e -6 -6 -6 -6 14 nC Qg (Typ.) FEATURES * TrenchFET(R) Power MOSFET: 1.5 V Rated * Ultra-Low On-Resistance RoHS APPLICATIONS COMPLIANT * Load Switch for Portable Devices - Guaranteed Operation at VGS = 1.5 V Critical for Optimized Design and Longer Battery Life 1206-8 ChipFET(R) 1 D D D D S D D G S Marking Code BP XXX Lot Traceability and Date Code Part # Code G D P-Channel MOSFET Bottom View Ordering Information: SI5499DC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 150 C)a, b TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current (10 s Pulse Width) Continuous Source-Drain Diode Currenta, b TC = 25 C TA = 25 C TC = 25 C Maximum Power Dissipationa, b TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) c, d Symbol VDS VGS Limit -8 5 - 6e - 6e - 6a, b, e - 5.6a, b Unit V ID A IDM IS - 25 - 5.2 - 2.1a, b 6.2 4 2.5a, b 1.6a, b - 55 to 150 260 W PD TJ, Tstg C Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 73321 S-80193-Rev. B, 04-Feb-08 www.vishay.com 1 New Product SI5499DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, b Symbol t5s Steady State RthJA RthJF Typical 48 17 Maximum 50 20 Unit C/W Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. Maximum under Steady State conditions is 95 C/W. SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = VGS, ID = - 5 mA VDS = 0 V, VGS = 5 V VDS = - 8 V, VGS = 0 V VDS = - 8 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 5.1 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 4.6 A VGS = - 1.8 V, ID = - 4.3 A VGS = - 1.5 V, ID = - 1.3 A Forward Transconductance Dynamic b a Symbol Test Conditions Min. -8 Typ. Max. Unit V 6 2.3 - 0.35 - 0.55 100 -1 - 10 - 25 0.030 0.037 0.046 0.057 18 0.036 0.045 0.056 0.077 - 0.8 mV/C V nA A A gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = - 4 V, ID = - 5.1 A S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1290 VDS = - 4 V, VGS = 0 V, f = 1 MHz VDS = - 4 V, VGS = - 8 V, ID = - 6 A VDS = - 4 V, VGS = - 4.5 V, ID = - 6 A f = 1 MHz VDD = - 4 V, RL = 0.7 ID - 5.6 A, VGEN = - 4.5 V, Rg = 1 420 270 23 14 1.7 2.7 8 10 70 60 30 8 VDD = - 4 V, RL = 0.7 ID - 5.6 A, VGEN = - 8 V, Rg = 1 70 55 55 15 110 90 45 15 110 85 85 ns 35 21 nC pF www.vishay.com 2 Document Number: 73321 S-80193-Rev. B, 04-Feb-08 New Product SI5499DC Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 5.6 A, di/dt = 100 A/s, TJ = 25 C IS = - 2.1 A, VGS = 0 V - 0.7 45 18 18 17 TC = 25 C -6 - 25 - 1.2 70 27 A V ns nC ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73321 S-80193-Rev. B, 04-Feb-08 www.vishay.com 3 New Product SI5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 VGS = 5 thru 2.5 V 2V 20 I D - Drain Current (A) I D - Drain Current (A) 8 10 15 6 10 1.5 V 4 TC = 125 C 5 1V 0 0.0 2 25 C - 55 C 0.5 1.0 1.5 2.0 0 0.0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 0.09 rDS(on) - On-Resistance (m) VGS = 1.5 V 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0 5 10 15 20 25 VGS = 4.5 V 400 Crss 0 0 1 VGS = 2.5 V VGS = 1.8 V C - Capacitance (pF) 1200 1600 2000 Transfer Characteristics Ciss 800 Coss 2 3 4 5 6 7 8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 7 VGS - Gate-to-Source Voltage (V) 6 5 4 3 2 1 0 0 5 10 15 20 25 VDS = 5.6 V VDS = 4 V ID = 6 A rDS(on) - On-Resistance (Normalized) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 - 50 VGS = 4.5 V ID = 5.1 A Capacitance - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 73321 S-80193-Rev. B, 04-Feb-08 New Product SI5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 40 rDS(on) - Drain-to-Source On-Resistance (m) 25 C, unless otherwise noted 0.10 ID = 5.1 A 0.08 I S - Source Current (A) TJ = 150 C 10 0.06 TA = 125 C TA = 25 C 0.04 TJ = 25 C 1 0.0 0.02 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.7 50 On-Resistance vs. Gate-to-Source Voltage 0.6 ID = 250 A Power (W) VGS(th) (V) 0.5 40 30 0.4 20 0.3 10 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Limited by rDS(on)* 10 ID - Drain Current (A) Single Pulse Power, Junction-to-Ambient 1 ms 10 ms 1 100 ms 1s 10 s DC 0.1 TA = 25 C Single Pulse 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 73321 S-80193-Rev. B, 04-Feb-08 www.vishay.com 5 New Product SI5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 14 12 10 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 I D - Drain Current (A) TC - Case Temperature (C) Current Derating* * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73321 S-80193-Rev. B, 04-Feb-08 New Product SI5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 84 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73321. Document Number: 73321 S-80193-Rev. B, 04-Feb-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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